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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by IRF540/D Product Preview TMOS E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients. * Avalanche Energy Specified * Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode * Diode is Characterized for Use in Bridge Circuits * IDSS and VDS(on) Specified at Elevated Temperature D IRF540 TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.070 OHMS (R) G S CASE 221A-09 TO-220AB MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 1.0 M) Gate-to-Source Voltage -- Continuous Gate-to-Source Voltage -- Non-repetitive (tp 10 ms) Drain Current -- Continuous Drain Current -- Continuous @ 100C Drain Current -- Single Pulse (tp 10 ms) Total Power Dissipation Derate above 25C Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy -- STARTING TJ = 25C (VDD = 50 Vdc, VGS = 10 Vdc, PEAK IL = 27 Apk, L = 1.0 mH, RG = 25 W) Thermal Resistance -- Junction-to-Case Thermal Resistance -- Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds E-FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS RJC RJA TL Value 100 100 20 40 27 19 95 145 1.16 - 55 to 150 365 0.86 62.5 260 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/C C mJ C/W C This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. REV 3 (c) Motorola TMOS Motorola, Inc. 1998 Power MOSFET Transistor Device Data 1 IRF540 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 100 Vdc, VGS = 0 Vdc) (VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 15 Adc) Drain-to-Source On-Voltage (VGS = 10 Vdc, ID = 27 Adc) (VGS = 10 Vdc, ID = 15 Adc, TJ = 125C) Forward Transconductance (VDS = 15 Vdc, ID = 15 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (See Figure 8) ( (VDS = 80 Vd , ID = 27 Adc, Vdc, Ad , VGS = 10 Vdc) ( (VDD = 30 Vd , ID = 15 Adc, Vdc, Ad , VGS = 10 Vdc, RG = 4.7 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 27 Adc, VGS = 0 Vdc) (IS = 27 Adc, VGS = 0 Vdc, TJ = 125C) Reverse Recovery Time ( (IS = 27 Adc, VGS = 0 Vdc, Ad , Vd , dIS/dt = 100 A/s) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the contact screw on tab to center of die) (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. Max limit - Typ (3) Reflects typical values. Cpk 3 sigma Ld -- -- Ls -- 7.5 -- 3.5 4.5 -- -- nH VSD -- -- trr ta tb QRR -- -- -- -- 0.93 0.84 110 100 10 0.67 2.4 -- -- -- -- -- ns Vdc -- -- -- -- -- -- -- -- 11.6 50 26 19 50 9.0 26 20 30 60 80 30 60 -- -- -- nC ns (VDS = 25 Vdc, VGS = 0 Vdc, Vdc Vdc f = 1.0 MHz) Ciss Coss Crss -- -- -- 1460 390 120 1600 800 300 pF Cpk 2.0(3) VGS(th) 2.0 -- Cpk 2.0(3) RDS(on) -- VDS(on) -- -- gFS 6.0 -- -- 15 1.9 1.8 -- Mhos 0.047 0.070 Vdc 2.9 6.8 4.0 -- Vdc mV/C Ohms V(BR)DSS 100 -- IDSS -- -- IGSS -- -- 100 -- -- 10 100 nAdc -- 116 -- -- Vdc mV/C Symbol Min Typ Max Unit mAdc mC + 2 Motorola TMOS Power MOSFET Transistor Device Data IRF540 TYPICAL ELECTRICAL CHARACTERISTICS 55 50 I D, DRAIN CURRENT (AMPS) 45 40 35 30 25 20 15 10 5 0 0 1 3 5 7 4 6 8 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2 9 10 5V 6V TJ = 25C 8V VGS = 10 V 9V 7V ID, DRAIN CURRENT (AMPS) 60 VDS 10 V 50 40 30 20 10 0 2 3 4 5 6 7 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 8 TJ = -55C 25C 100C Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics R DS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS) 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 0 5 10 15 20 25 30 35 40 ID, DRAIN CURRENT (AMPS) 45 50 55 -55C 25C VGS = 10 V TJ = 100C 0.060 TJ = 25C 0.055 VGS = 10 V 0.050 15 V 0.045 0.040 0.035 0.030 0 5 10 15 20 25 30 35 40 45 50 55 ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance versus Drain Current and Temperature Figure 4. On-Resistance versus Drain Current and Gate Voltage 2.0 RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) IDSS, LEAKAGE (nA) VGS = 10 V ID = 15 A 1000 VGS = 0 V TJ = 125C 100C 100 10 0 10 20 30 40 50 60 70 80 90 100 110 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage Motorola TMOS Power MOSFET Transistor Device Data 3 IRF540 TYPICAL ELECTRICAL CHARACTERISTICS VDS = 0 V Ciss TJ = 25C VGS = 0 V VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 150 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 4500 4000 3500 C, CAPACITANCE (pF) 3000 2500 2000 1500 1000 500 0 -10 -5 0 Coss Crss VGS VDS 5 10 15 20 25 Ciss Crss 10 9 8 7 6 5 4 3 2 1 0 0 5 Q3 10 VDS 30 35 15 20 25 QG, TOTAL GATE CHARGE (nC) 40 45 50 TJ = 25C ID = 27 A Q1 Q2 QT VGS 80 72 64 56 48 40 32 24 16 8 0 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 IS, SOURCE CURRENT (AMPS) TJ = 25C ID = 15 A VDD = 30 V VGS = 10 V tr tf 10 td(off) td(on) 30 25 20 15 10 5 0 1.0 10 RG, GATE RESISTANCE (OHMS) 100 Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge TJ = 25C VGS = 0 V 100 t, TIME (ns) 1.0 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current 1000 EAS , SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) VGS = 20 V SINGLE PULSE TC = 25C 100 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 10 ms 400 350 300 250 200 150 100 50 0 25 50 75 100 125 TJ, STARTING JUNCTION TEMPERATURE (C) ID = 27 A ID, DRAIN CURRENT (AMPS) 10 100 ms 1.0 ms 10 ms 1.0 0.1 1.0 10 dc 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature 4 Motorola TMOS Power MOSFET Transistor Device Data IRF540 1.0 D = 0.5 Rthjl(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 1.0E-05 1.0E-04 1.0E-03 t, TIME (seconds) 1.0E-02 1.0E-01 1.0E+0 t1 P(pk) RJC(t) = r(t) RJC RJC = 1.67C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) t2 DUTY CYCLE, D = t1/t2 Figure 13. Thermal Response Motorola TMOS Power MOSFET Transistor Device Data 5 IRF540 PACKAGE DIMENSIONS -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J CASE 221A-09 (TO-220AB) ISSUE Z Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488 6 IRF540/D Motorola TMOS Power MOSFET Transistor Device Data |
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